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| ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BR5000W - BR5010W PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength 1.130 (28.7) 1.120 (28.4) SILICON BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=55C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 C Ta = 100 C SYMBOL BR 5000W BR 5001W BR 5002W BR 5004W BR 5006W BR 5008W BR 5010W UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 50 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps. IFSM It VF IR IR(H) RJC TJ TSTG 2 400 664 1.1 10 200 1.0 - 40 to + 150 - 40 to + 150 Amps. AS Volts A A C/W C C 2 Typical Thermal Resistance at Junction to Case ( Note 1 ) Operating Junction Temperature Range Storage Temperature Range Notes : 1 ) Thermal resistance from Junction to Case with units mounted on heat sink. UPDATE : APRIL 21, 1998 ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( BR5000W - BR5010W ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES 60 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 600 50 5 0 5 0 5 0 5 0 5 0 5 0 PEAK FORWARD SURGE CURRENT, AMPERES 500 40 400 TJ = 50 C 30 300 20 200 10 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE REVERSE CURRENT, MICROAMPERES 10 TJ = 100 C FORWARD CURRENT, AMPERES 10 Pulse Width = 300 s 1 % Duty Cycle 1.0 1.0 0.1 TJ = 25 C TJ = 25 C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS |
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